| PART |
Description |
Maker |
| RFPP3870 |
GaAs/GaN Push Pull Hybrid GaAs/GaN Push Pull Hybridz
|
RF Micro Devices
|
| RFCM2680SB RFCM2680SR RFCM2680TR13 RFCM2680PCBA-41 |
45MHz TO 1003MHz GaAs/GaN POWER DOUBLER MODULE
|
RF Micro Devices
|
| RFPD2580 |
45MHz to 1200MHz GaAs/GaN POWER DOUBLER HYBRID
|
RF Micro Devices
|
| D10040200PL1 |
GaAs/GaN Power Doubler Hybrid 45MHz to 1000MHz
|
RF Micro Devices
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| TGA2624-CP TGA2624-CP-15 |
9 to 10 GHz, 16 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| TG1000-10 |
GaN Hybrid Power Amplifier
|
RFHIC
|
| TGI1314-50L |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
